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Out of standard performances

WHY USE SILICON PASSIVE IN YOUR DESIGN?

Murata PICS shows superior performance against alternative technologies

  • At the component level
    • Complete design rules available
    • Custom design made possible
    • Against Frequency
    • Against Temperature
    • Against Operating Voltage
  • At the system level
    • High integration capabilities
    • High predictability thanks to simulation models
    • High repeatability thanks to IC manufacturing Excellence

SILICON PASSIVES: BETTER PERFORMANCE WITH COMPLETE DESIGN RULES

  • Comparison between typical design rules of LTCC, Laminate and Silicon passive (PICS) based circuits
Design Rules (all dimensions are given in µm) LTCC Laminate PICS
Min. line width 50 65 3
Min. line space 50 65 5
  • Increased routing density leads to higher performance

SILICON PASSIVES: BETTER PERFORMANCE FOR PLATFORM INTEGRATION

  • Exact component value from simulation can be used, no compromises on performance
  • Performance stability over temperature range, thanks to +/-30 ppm variation per C (COG performances)
  • Accurate matching value of 1 % accuracy
Design advantage LTTC Laminate PICS
Simulation accuracy Medium Low High
Temperature stability Yes, with COG capacitor Yes with COG capacitor Yes, without cost penalty
1 % Component Matching Yes, with cost penalties Yes, with cost penalties Yes, without cost penalty
High Routing density No Very low Yes

SILICON PASSIVES: BETTER PERFORMANCE THAN SMDS

  • Comparison between typical SMD inductor and Silicon Passives (PICS)
Design Rules High frequency SMD inductor (0201) PICS (Cu)
Value (nH) 8.2 8.2
Tolerance 5 % 1 %
Impact tolerance @ 5 GHz High Low
Q Min. @ 100 MHz 8 9
SRF (self resonant frequency) 3700 5600
  • The material properties of the HRS outperform organic laminate and ceramic substrates. The extremely low loss tangent value allows devices to operate at very high frequency with very low attenuation
  • PICS allows to design at frequencies up to 100 GHz

3D SILICON PASSIVE DEVICES OUT OF STANDARD PERFORMANCE

Capacitors
  • Superior temperature stability (<20 ppm)
    • Technology characterized to +200 C
  • Very low leakage current (<40 nA)
  • Superior DC voltage stability (<0.1 %/V)
    • No capacitance change over voltage variation.
  • Very low ESR < 40 mOhm
Zener Diodes
  • Breakdown voltage up to 100 Volts and ESD Capability 15 kV Air discharge (IEC 6100-4-2, level 4)
Resistors
  • Excellent matching (better than 0.5 %)
Coils
  • Superior Q-factor (> 80)
  • Self-res. freq. > 45GHz
3D SILICON PASSIVE TECHNOLOGY ALLOWS COMPLETE INTEGRATION OF:
  • excellent RF filtering
  • full RF-digital cross-talk cancellation
  • excellent DC decoupling filtering

    EXAMPLE: IMPROVING PERFORMANCE IN MIXED RF+ DIGITAL APPLICATIONS

    • Dual TV tuner

    - Thanks to the combination of high decoupling efficiency with optimal performance RF components, noise behavior is reduced considerably compared with designs with SMDs on laminate